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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D302
PMEM4010ND NPN transistor/Schottky diode module
Product specification 2002 Oct 28
Philips Semiconductors
Product specification
NPN transistor/Schottky diode module
FEATURES * 600 mW total power dissipation * High current capability * Reduces required PCB area * Reduced pick and place costs * Small plastic SMD package. Transistor: * Low collector-emitter saturation voltage. Diode: * Ultra high-speed switching * Very low forward voltage * Guard ring protected.
handbook, halfpage 6
PMEM4010ND
PINNING PIN 1 2 3 4 5 6 emitter not connected cathode anode base collector DESCRIPTION
5
4
4 3 6
APPLICATIONS * DC/DC convertors * Inductive load drivers * General purpose load drivers * Reverse polarity protection circuits. DESCRIPTION Combination of an NPN transistor with low VCEsat and high current capability and a planar Schottky barrier diode with an integrated guard ring for stress protection in a SOT457 (SC-74) small plastic package. PNP complement: PMEM4010PD.
Marking code: B3.
5 1
1
2
3
MGU865
Fig.1 Simplified outline (SOT457) and symbol.
2002 Oct 28
2
Philips Semiconductors
Product specification
NPN transistor/Schottky diode module
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL NPN transistor VCBO VCEO VEBO IC ICM IBM Tj VR IF IFSM Tj Ptot Tstg Tamb Note collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current junction temperature open emitter open base open collector - - - - - - - - - t = 8.3 ms half sinewave; JEDEC method - - Tamb 25 C; note 1 - -65 -65 PARAMETER CONDITIONS MIN.
PMEM4010ND
MAX.
UNIT
40 40 5 1 2 1 150
V V V A A A C V A A C mW C C
Schottky barrier diode continuous reverse voltage continuous forward current non repetitive peak forward current junction temperature 20 1 5 125
Combined device total power dissipation storage temperature operating ambient temperature 600 +150 +125
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. PARAMETER thermal resistance from junction to ambient CONDITIONS in free air; note 1 VALUE 208 UNIT K/W
2002 Oct 28
3
Philips Semiconductors
Product specification
NPN transistor/Schottky diode module
CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL NPN transistor ICBO ICEO IEBO hFE collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain VCB = 40 V; IE = 0 VCB = 40 V; IE = 0; Tamb = 150 C VCE = 30 V; IB = 0 VEB = 5 V; IC = 0 VCE = 5 V; IC = 1 mA VCE = 5 V; IC = 500 mA VCE = 5 V; IC = 1 A VCEsat collector-emitter saturation voltage IC = 100 mA; IB = 1 mA IC = 500 mA; IB = 50 mA IC = 1 A; IB = 100 mA VBEsat RCEsat VBEon fT Cc VF base-emitter saturation voltage equivalent on-resistance base-emitter turn-on voltage transition frequency collector capacitance IC = 1 A; IB = 100 mA IC = 500 mA; IB = 50 mA; note 1 VCE = 5 V; IC = 1 A IC = 50 mA; VCE = 10 V; f = 100 MHz VCB = 10 V; IE = Ie =0 ; f = 1 MHz IF = 10 mA; note 1 IF = 100 mA; note 1 IF = 1000 mA; see Fig.7; note 1 IR reverse current VR = 5 V; note 1 VR = 8 V; note 1 VR = 15 V; see Fig.8; note 1 Cd Note 1. Pulse test: tp 300 s; 0.02. diode capacitance VR = 5 V; f = 1 MHz; see Fig.9 - - - - 300 300 200 - - - - - - 150 - - - - - - - - PARAMETER CONDITIONS MIN.
PMEM4010ND
TYP. - - - - - - - - - - - 260 - - - 240 300 480 5 7 10 19
MAX.
UNIT
100 50 100 100 - 900 - 80 110 190 1.2 <220 1.1 - 10
nA A nA nA
mV mV mV V m V MHz pF
Schottky barrier diode continuous forward voltage 270 350 550 10 20 50 25 mV mV mV A A A pF
2002 Oct 28
4
Philips Semiconductors
Product specification
NPN transistor/Schottky diode module
PMEM4010ND
handbook, halfpage
1000
MHC077
handbook, halfpage
(1)
10
MHC078
hFE 800 VBE (V)
600
(2)
1 400
(3)
(1) (2)
(3)
200
0 10-1
1
10
102
103 104 IC (mA)
10-1 10-1
1
10
102
103 104 IC (mA)
NPN transistor; VCE = 5 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
NPN transistor; VCE = 5 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C.
Fig.2
DC current gain as a function of collector current; typical values.
Fig.3
Base-emitter voltage as a function of collector current; typical values.
103 handbook, halfpage VCEsat (mV)
MHC079
102 handbook, halfpage RCEsat ()
MHC080
102
(1)
10
(2) (3)
10
1
(1) (2) (3)
1
1
10
102
103
IC (mA)
104
10-1 10-1
1
10
102
103 104 IC (mA)
NPN transistor; IC/IB = 10. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
NPN transistor; IC/IB = 10. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
Fig.4
Collector-emitter saturation voltage as a function of collector current; typical values.
Fig.5
Equivalent on-resistance as a function of collector current; typical values.
2002 Oct 28
5
Philips Semiconductors
Product specification
NPN transistor/Schottky diode module
PMEM4010ND
handbook, halfpage
400
MHC081
103 handbook, halfpage IF (mA) 102
MHC311
fT (MHz) 300
(1)
(2)
(3)
200
10
100
1
0 0 200 400 600 800 1000 IC (mA)
10-1
0
0.2
0.4
VF (V)
0.6
NPN transistor; VCE = 10 V.
Schottky barrier diode. (1) Tamb = 125 C. (2) Tamb = 85 C. (3) Tamb = 25 C.
Fig.6
Transition frequency as a function of collector current.
Fig.7
Forward current as a function of forward voltage; typical values.
105 handbook, halfpage IR (A)
(1)
MHC312
handbook, halfpage
80
MHC313
Cd (pF) 60
104
103
(2)
40 102
(3)
20 10
1
0
5
10
15
20 VR (V)
25
0 0 5 10 15 VR (V) 20
Schottky barrier diode. (1) Tamb = 125 C. (2) Tamb = 85 C. (3) Tamb = 25 C.
Schottky barrier diode; f = 1 MHz; Tamb = 25 C.
Fig.8
Reverse current as a function of reverse voltage; typical values.
Fig.9
Diode capacitance as a function of reverse voltage; typical values.
2002 Oct 28
6
Philips Semiconductors
Product specification
NPN transistor/Schottky diode module
APPLICATION INFORMATION
PMEM4010ND
handbook, halfpage handbook, halfpage
VCC IN
Vin
Vout
CONTROLLER
MGU863 MGU864
Fig.10 DC/DC convertor.
Fig.11 Inductive load driver (relays, motors, buzzers) with free-wheeling diode.
2002 Oct 28
7
Philips Semiconductors
Product specification
NPN transistor/Schottky diode module
PACKAGE OUTLINE Plastic surface mounted package; 6 leads
PMEM4010ND
SOT457
D
B
E
A
X
y
HE
vMA
6
5
4
Q
pin 1 index
A A1 c
1
2
3
Lp
e
bp
wM B detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 0.1 0.013 bp 0.40 0.25 c 0.26 0.10 D 3.1 2.7 E 1.7 1.3 e 0.95 HE 3.0 2.5 Lp 0.6 0.2 Q 0.33 0.23 v 0.2 w 0.2 y 0.1
OUTLINE VERSION SOT457
REFERENCES IEC JEDEC EIAJ SC-74
EUROPEAN PROJECTION
ISSUE DATE 97-02-28 01-05-04
2002 Oct 28
8
Philips Semiconductors
Product specification
NPN transistor/Schottky diode module
DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION
PMEM4010ND
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
II
Preliminary data Qualification
III
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2002 Oct 28
9
Philips Semiconductors
Product specification
NPN transistor/Schottky diode module
NOTES
PMEM4010ND
2002 Oct 28
10
Philips Semiconductors
Product specification
NPN transistor/Schottky diode module
NOTES
PMEM4010ND
2002 Oct 28
11
Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2002
SCA74
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/01/pp12
Date of release: 2002
Oct 28
Document order number:
9397 750 10212

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